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| Products from Other
Companies |
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List of Products |
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Tertiary Butyl Arsine (TBAs): Arsine
Gas Substitute |
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Tertiary Butyl Phosphine (TBP): Phosphine
Gas Substitute |
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1.1-Dimethylhydrazine (uDMHy): Ammonia
Gas Substitute |
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Ditertiarybutylsilane (DTBSi): Disilane
Gas Substitute |
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Trimethylarsine (TMAs): Carbon Dopants |
We also handle other organometallic compounds. |
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Characteristics
and Applications of AKZO NOBELfs Organometallic
Compounds |
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Organometallic compounds
are used in compound semiconductors.
Compound semiconductors are composed of multiple elements,
unlike silicon semiconductors, which use the single
element of silicon, and compared to silicon semiconductors,
have the following excellent characteristics. |
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| 1. |
Light Absorption and Emitting
Functions
Both visible light and infrared can be emitted
using silicon-free luminescence. Further, the
light absorption function has better conversion
efficiency than silicon. Using these attributes,
compound semiconductors can be applied to displays,
traffic signals, optical communications, solar
batteries, etc. |
| 2. |
High-Speed Operation Characteristics
Electron transfer is faster than for silicon;
for example, electron transfer in GaAs is five
times faster than that in silicon, enabling
high-speed calculations to be performed, and
so it is expected to be used in supercomputers. |
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High Frequency Characteristics
Compound semiconductors have better noise and
power characteristics than silicon in the high
frequency range (4 GHz or higher), and so are
used in amplifiers and oscillators in microwave
and satellite communications. |
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Electromagnetic Conversion
Functions
Compound semiconductors possess magnetic sensitivity,
unlike silicon, and so, for example, can be used
to detect accurately the number of motor revolutions. |
| 5. |
Radiation and Heat Resistance
Characteristics
Compound semiconductors have excellent radiation
and heat resistance characteristics compared
to silicon, and are therefore used in solar batteries
in outer space, etc. |
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Thus, compound semiconductors
behave differently depending on the various combinations
of elements in Group III and Group V in the Periodic
Table.
The following are examples of materials currently used
that consist of combinations of elements in Group III
and Group V. |
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| Group III |
Trimethyl-Indium (TMIn)
Trimethyl-Aluminum (TMAl)
Trimethyl-Gallium (TMGa) |
| Group V |
Arsine Gas (AsH3)
Phosphine Gas (PH3)
Ammonia Gas (NH3) |
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| Further, semiconductors
doped with impurities conduct electrical current
by producing a negative carrier (electrons) and a
positive carrier (positive holes). The impurities
with which semiconductors are doped are called dopants.
Commonly used dopants are listed below. |
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| Dopants |
Dimethyl Zinc (DMZn) and Diethyl
Zinc (DEZn)
Trimethyl Arsine (TMAs)
Carbon Tetrabromide (CBr4)
Disilane Gas (Si2H6) |
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Thus, compound semiconductors
are combinations of elements in Group III and Group
V.
The biggest problem with the MOVPE method, however,
is that it involves the use of AsH3 gas and PH3 gas
as Group V source gases in high-pressure cylinders
and these gases are highly toxic,.
From the viewpoint of safety, attempts are being made
to use arsine and phosphine organic compounds, which
have low toxicity and are liquid at room temperature.
Consequently, TBAs and TBP have been developed. Unlike
high-pressure gases, TBAs and TBP, which are stable
and have good thermal decomposition efficiency, pose
little risk of immediate, major leakage if the container
is ruptured.
In the past, purity of organic metal compounds was
low and crystal quality was poor, but now purity is
good and the MOVPE method can achieve good results
equivalent to conventional methods that use hydrides.
Using AZKO organic metal compounds has the following
advantages.
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Improved safety |
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Realization of hot growth |
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Low V/III ratio |
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Reduced clogging of pipes |
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Low costs |
| 6. |
Improved quality |
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| Currently, Tomoe Shokai
supplies organic Group V raw materials to 14 companies
in Japan. |
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